2017-01-05

High Performance AlN templates on sapphire and on patterned sapphire substrates (PSS)

It is grear performance of AlN templates on sapphire and on patterned sapphire substrates (PSS). Latest XRD measurements of templates overgrown with GaN by MOCVD by our customers show XRD 102 FWHM values of below 180 arcsec. Complete LED structures show 5% higher PL intensity in comparison to LED grown in one step in MOCVD. Together with the extremely good surface quality (RMS < 0.4nm) the templates are the ideal choice to avoid the influence of the MOCVD reactor memory effect, to avoid in-situ cleaning, to avoid a nucleation layer and to avoid 3D-2D growth. All this are the key for reproducibility, constant high quality and high yield.